This section is involved in research and development of state of the art devices based on semiconductor heterostructures, such as semiconductor laser, detectors etc. From last several years we have been working on metal organic vapour phase epitaxy (MOVPE) growth of semiconductor materials based on group III-V and III-N systems and development of optoelectronic devices. The various activities on experimental and theoretical research being carried out are in the sphere of semiconductor lasers, detectors, solar cells and nanostructures.

(a)	(b)
(c)	(d)
a) AIX 200, b) Indegenouly developed nitride MOVPE machine c) CW Laser diode emission photograph on IR card, d) Emission spectra of different lasers (Developed at SCLS/SSLD, RRCAT, Indore)

• Semiconductor Laser
• Semiconductor Detectors
• Semiconductor Materials and Nanostructures
• Nitride MOVPE Growth
• Theoretical Studies

Facilities

• Characterization Techniques
• Device Processing